Test Service

Optical modules: objective lens 5X, 10X, 20X

Semi-automatic platform: Stroke: 200mm X and Y

Static repeatability: less than 3%

Scanning length: ≥55mm 

Maximum data points in a single scan: 60,000  

Sample stage: 150mm

Probe pressure range: 1-15mg (0.03mg optional)

X-Y travel range: ≧100mm

Stylus tip size: 2.5 μm

Measurement repeatability: 1σ < 0.1um

Vertical range range: 600μm 

6 inch backward compatible

Wafer size: 2, 4, 6 inches

Minimum map resolution: 2 inches > 0.5mm, 4 inches> 1mm, 6 inches > 2mm

PW, FWHM, dip of DBR repeatability accuracy: <±0.5nm

Peak intensity, integral intensity, absolute reflectivity inclination: < ±5%

Test current If range: 100pA~1A  

Test accuracy: (1%+2counts)

Forward voltage VF range: 0.1mV~20V 

Test accuracy: (0.1%+2counts)

Peak wavelength range: from 380nm ~ 780nm  

Test accuracy: 0.5nm (characteristic wavelength of standard light source elements)

Luminous intensity range: 1~30,000 mcd   

Measurement accuracy: 4% (for standard light source) ll color coordinate (x,y)

Range: 0.000~1.0000 Measurement repeatability±0.003 (for standard light sources)

X-ray tube height adjustable 6mm

Slide stage adjustment: ten: 100+/-0.01mm Y: 100+/-0.01mm Z: 10+/-0.01mm

Power factor: 720+/-0.01Psi: 180+/-0.01

Angle reproducibility: ±0.0001 degrees

Scanning mode: θ/θ scanning mode

Detector: X'Celerator 

Super energy detector, charge Xe proportional detector

Three objectives with × 5, × 10, × 20 (can be equipped with × 50, × 100 objectives)

White LED illumination, light and dark field of view conversion operation, automatic focus

Single pixel size: 4.54μm

Imaging size: 2752×2200 pixels                 

It can test silicon wafers in the range of 50mm-200mm

It can resolve defects of 200nm-1μm size on the surface of the epitaxial layer

Magnification: 15X-800000X

Accelerating voltage: 0-30KV

Electron gun: Schottky field-firing electron gun

Sample stage stroke: X: 0-100mm, Y: 0-100mm, Z: 0-50mm, R: 360° continuous, T: -5°-+70°

Resolution (secondary electron 30KV): 1nm

Resolution (secondary electron 1KV): 3nm

Resolution (backscattered electrons 30KV): 2.5nm

Resistivity: 10-5~105 Ω.cm

Block resistance: 10-4~106 Ω

Conductivity: 10-5~105s/cm

Resistance: 10-5~105 Ω

Digital voltmeter: resolution 10μV

Accuracy: ±0.1% 

Spectral range: 250 nm-1650 nm

Angle of incidence: 45º-90º 

Sample thickness: < 8mm

Sample diameter: up to 200mm

Spot diameter: <5mm

Film thickness measurement range: 1nm-20um

Refractive index accuracy: 0.0005

Film thickness measurement accuracy: less than 0.9nm (based on standard sheets)

Spectral resolution: less than 2nm

100mm*100mm field of view:

Opaque grain, the smallest identifiable grain is 5*5mil

Translucent grain, 5*5mil

Transparent grain: The minimum identifiable electrode size is Φ80um   

Grain spacing: support a minimum of 1.1 times the spacing after film expansion

Maximum counting error: Opaque ≦ ±0.01%

Transparent grain/translucent grain: ≦±0.03%

Spectral range: 370-1000nm

Spectral resolution: 200–1000 nm: 1.6 nm, 900–1700 nm: 3.2 nm

Sample size: 12 inches backward compatible

Film thickness measurement range (only when measuring film thickness): 15 nm – 100um

Film thickness measurement repeatability: 0.1 nm

Accuracy: 2nm or 0.4%

Chuck uniformity: 0.01 mm repeatability X, Y, Z

Shaft: 2μm voltage

Measuring range: 0-200 current V current

Measuring range: 0-1A

Spectrometer wavelength range: 350-1050nm

Luminance measurement range: 0.00-65000 mcd

Voltage optimal resolution: 5uVBest

Accuracy: 0.02% current is best

Resolution: 10pA

Best accuracy: 0.035%

Spectrometer resolution: 0.3nm

Repeatability: 0.4 nm

Brightness measurement range: 0.00-65000

MCD repeatability: 3%

Laser wavelength: 635nm/5mW

Force: 1-5000 Mpa

Maximum number of scan points in the range: Max. 10,000 points

Minimum scanning step: 0.1 mm

Repeatability: <1% (when the radius of curvature is less than 20m), 3% (when the radius of curvature is less than 100m)