Single-step Process Foundry
Single-step Process Foundry
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Lithographic Process
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Contact lithography
Minimum graphic size: 1μm, overlay accuracy: ±0.5μmStep-by-step lithography
Minimum graphic size: 0.5μm, overlay accuracy: ±0.1μm
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Metal Film Process
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Metal evaporation
Al、Ti、Pt、Au、Ag、Ni、C、Ge、SiO2/TiO2、ITOMetal sputtering
Ti、Cu、TiW、Au、Al、Ni、GeElectroplated metal
Au、Ni
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Dielectric Film Process
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PECVD deposition
SiNx、SiO2ALD deposition
Al2O3、AlN
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Etching Process
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Dry etching
GaN、GaAS、SiNx、SiO2、InPWet etching
Cr corrosion, BOE corrosion, gold etching, etc
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Chemical Processes
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Organic bench
Supports degumming, peeling, and organic cleaning processesAcid bench
It can support acid corrosion, acid treatment, alkali treatment and other processes
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Downgauging Process
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Bonding and debonding process
max temp: 200°C, ultimate vacuum: -710mmHg, heating rate ≥10°C/minGaN/Si/GaAs WAFER 4 inches and 6 inches
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Laser Scribbing
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GaAs and GaN wafers can be cut
355nm laser light source, maximum power 15W. Suitable for wafers under 6 inches1. Meet 2-6 inch wafer cutting
2. Wafer thickness< 500um
3. Depth of cut accuracy: +/-5um, straightness< 10um, chipping angle< 15um